unisonic technologies co., ltd 8550s pnp silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2009 unisonic technologies co., ltd qw-r206-002,e low voltage high current small signal pnp transistor ? description the utc 8550s is a low voltage high current small signal pnp transistor, designed for class b push-pull audio amplifier and general purpose applications. ? features *collector current up to 700ma *collector-emitter voltage up to 20 v *complimentary to 8050s sot-23 1 3 2 to-92 1 ? ordering information ordering number pin assignment normal lead free halogen-free package 1 2 3 packing 8550s-x-ae3-r 8550sl-x-ae3-r 8550sg-x-ae3-r sot-23 e b c tape reel 8550s-x-t92-b 8550sl-x-t92-b 8550sg-x-t92-b to-92 e c b tape box 8550s-x-t92-k 8550sl-x-t92-k 8550SG-X-T92-K to-92 e c b bulk ? marking (for sot-23 package)
8550s pnp silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r206-002,e ? absolute maximum ratings ( ta=25c, unless otherwise specified ) parameter symbol rating units collector-base voltage v cbo -30 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -5 v collector current i c -700 ma sot-23 350 mw collector dissipation(ta=25c) to-92 p c 1 w junction temperature t j +150 c storage temperature t stg -40 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta= 25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =-100 a, i e =0 -30 v collector-emitter breakdown voltage bv ceo i c =-1ma, i b =0 -20 v emitter-base breakdown voltage bv ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-30v, i e =0 -1 a emitter cut-off current i ebo v eb =-5v, i c =0 -100 na h fe1 v ce =-1v, i c =-1ma 100 h fe2 v ce =-1v, i c =-150 ma 120 400 dc current gain h fe3 v ce =-1v, i c =-500ma 40 collector-emitter satu ration voltage v ce(sat) i c =-500ma, i b =-50ma -0.5 v base-emitter satura tion voltage v be(sat) i c =-500ma, i b =-50ma -1.2 v base-emitter satura tion voltage v be v ce =-1v, i c =-10ma -1.0 v current gain bandwidth product f t v ce =-10v, i c =-50ma 100 mhz output capacitance cob v cb =-10v, i e =0, f=1mhz 9.0 pf ? classification of h fe2 rank c d e range 120-200 160-300 280-400
8550s pnp silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r206-002,e typical characteristics collector current, ic (ma) dc current gain, hfe collector current, ic (ma) saturation voltage (mv) current gain-bandwidth product, ft(mhz) capacitance, cob (pf)
8550s pnp silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r206-002,e utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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